AZ 5214E Photoresist

The etching thickness of AZ photoresist ranges from 1 μm to 150 μm and more.

AZ photoresist features:

Suitable for high resolution (lift-off) processes

For positive/negative graphics

A wide film thickness range

AZ photoresist process conditions:

Pre-bake at 100 °C for 60 seconds (DHP)

Exposure: 1 line step exposure machine/contact exposure machine

Reverse Baking: 110 ~ 125 °C 90 seconds (DHP) : deionized water 30 seconds

Total Exposure: 310-405nm (full exposure under exposure light)

Development: AZ300 MIF developer (2.38%)23 °C 30 ~ 60 seconds Puddle

AZ Developer (1:1)23 °C 60 seconds Dipping

AZ 400K (1:4)23 °C 60 seconds Dipping

Rinse: Deionized water for 30 seconds

Bake at 120 °C for 120 seconds (DHP)

Stripping: AZ stripping solution or oxygen plasma ashing

Name of photoresist Type Spin thickness
Merck AZ Positive/negative interchangeable photoresist AZ 5214 0.5-6um
AZ 50XT Positive glue AZ 50XT 40-80um
AZ 9260 Positive glue AZ 9260 6.2-15um
AZ 4620 photoresist AZ 4620 10-15um
MicroChem SU-8 Negative glue SU-8 2015 13-38um
MicroChem SU-8 Negative glue SU-8 2050 40-170um
MicroChem SU-8 Negative glue SU-8 2075 60-240um
MicroChem SU-8 Negative glue SU-8 2150 190-650um
MicroChem SU-8 Negative glue SU-8 3010 8-15um
MicroChem SU-8 Negative glue SU-8 3050 44-100um

The etching thickness of AZ photoresist ranges from 1 μm to 150 μm and more. High sensitivity, high yield, high adhesion, especially for wet etching process improvement, widely used in the global semiconductor industry.


Type and parameter of photoresist

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