Polished silicon

Brief introduction of polished silicon wafers

 

Size 1 inch to 4-inch range, thickness 0.2 mm, 0.4 mm, 1 mm, 1.2 mm and other thickness, single-sided polishing.

 

Parameters and applications of polished silicon wafers:

Parameter Type

 

Sitechnical specification

 

Product size 1-4inches
Method of growth

 

Czochralski single crystal (CZ)

 

Surface finish

 

one-sided finish

 

Diameter tolerance

 

100.2±0.3mm
Doping type

 

dopant (phosphorus or boron)

 

Crystal Orientation

 

100  111
Resistivity

Ω

<0.0015 Ω.cm  0.001-0.5Ω.cm  1-10Ω.cm
Flatness

TIR

<3um
Warp

TTV

<10um
Curvature

BOW

<10um
Polishing roughness

Ra

<0.5nm
Granularity

Pewaferr

<(for size>0.3um)
Thickness

um

please consult

 

Application iIt is used to fabricate microfluidic chips, such as photolithography process, synchrotron radiation sample carrier, LPCVD/PECVD film as the substrate, magnetron sputtering sample, XRD, SEM, AFM, infrared spectrum, as well as in the Molecular beam epitaxy of Crystal Semiconductor.

 

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